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Česká pošta	Středa 03.12
PPL	Středa 03.12
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Nanoliquid Processes for Electronic Devices

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3851 Kč 4 333 Kč

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Part I Introduction to liquid process Chapter 1. Liquid process 1-1 Liquid and its formability 1-2 Categories of liquid process 1-2-1 First step: Conversion way from liquid to solid 1-2-2 Second step: Direct forming process Part II Silicon-based materials Chapter 2. Guide to silicon-based materials Chapter 3. Liquid silicon 3-1 CPS 3-1-1 Hydrosilanes and CPS 3-1-2 Structures of a CPS molecule 3-1-3 Electronic structure of isolated CPS molecule 3-1-4 Interaction between CPS molecules 3-2 Silicon ink 3-2-1 Silicon ink from CPS 3-2-2 Polymer structure in silicon ink 3-3-3 Doped silicon inks Chapter 4. Thin film formation by coating 4-1 Coating process and molecular forces 4-2 The origin of molecular forces 4-2-1 Theory of van der Waals free energy 4-2-2 Measurement of refractive index n 4-2-3 Molecular forces of CPS and silicon compounds 4-3 Coating of Si ink 4-3-1 General remarks on Si ink coating 4-3-2 Observations of liquid films 4-3-3 Hamaker constant and coating property 4-4 Conversion from polysilane to amorphous Si by pyrolysis 4-4-1 Film appearance during pyrolysis and TG/DTA analysis of Si ink 4-4-2 Raman scattering analysis 4-4-3 FT-IR and SIMS analyses 4-4-4 Properties of amorphous films Chapter 5. Liquid vapor deposition using liquid silicon (LVD) 5-1 Formation of i, n and p type silicon film by LVD 5-1-1 LVD method and experiment 5-1-2 CPS deposition process 5-1-3 Film properties 5-1-4 Conclusion 5-2 High-quality amorphous silicon film with LVD 5-2-1 New equipment for LVD 5-2-2 Film quality with processing temperature 5-2-3 Film quality with CPS supply speed 5-2-4 Electronic properties of a-Si:H films 5-2-5 Oxygen contamination in a-Si:H film 5-2-6 Summary Chapter 6. Liquid silicon family materials (1) -- SiO 2 , CoSi 2 and Al from liquid Si -- 6-1 SiO 2 fabrication from liquid silicon 6-1-1 Forming SiO 2 films from liquid silicon material 6-1-2 The sole solution-processed SiO 2 film for TFTs 6-1-3 Multi use of solution-processed SiO 2 films for TFTs 6-1-4 Conclusion 6-2 CoSi 2 fabrication from liquid silicon 6-2-1 Metal silicide from solution 6-2-2 Synthesis of cobalt silicide ink 6-2-3 Formation of CoSi 2 films 6-2-4 TEM observation 6-2-5 Comparison of this process with the conventional ones 6-2-6 More detailed analyses 6-2-7 Conclusions 6-3 Al fabrication via solution process 6-3-1 Triethylamine alane as a precursor of metal Al 6-3-2 Deposition process and reaction 6-3-3 Analysis of film structure and Al growth manner 6-3-4 Selective deposition of Al 6-3-5 Conclusion Chapter 7. Liquid silicon family materials (2) -- SiC ink and SiC film from liquid Si -- 7-1 SiC fabrication via liquid process 7-1-1 Preparation and characterization of SiC precursor polymer 7-1-2 a-SiC film formation and analyses of films 7-1-3 Polymer structure 7-1-4 Polymer-to-ceramic conversion 7-1-5 Conclusion 7-2 Correlation of Si/C stoichiometry between SiC ink and a-SiC film 7-2-1 Polymer and film preparation 7-2-2 Correlation between PSH and a-SiC 7-2-3 Structural properties of an a-SiC film 7-2-4 Optical and electrical properties of an a-SiC film 7-2-5 Conclusion 7-3 n-type a-SiC by coating 7-3-1 Polymer and film preparation and their analyses 7-3-2 Polymer analysis 7-3-3 Thin-film formation 7-3-4 Effect of carbon content on film 7-3-5 Effect of phosphorous concentration on film 7-3-6 Conclusion 7-4 p-type a-SiC via LVD method 7-4-1 SiC-ink preparation and film deposition 7-4-2 Ink analysis 7-4-3 Film analysis 7-4-4 Discussion 7-4-5 Conclusion Chapter 8. Nano pattern formation using liquid silicon 8-1 Area selective deposition of silicon family materials 8-1-1 Area selective deposition of silicon using the difference of molecular force 8-1-